jan 200 9 . rev. 0 1 / 5 cop yright @winsemi semiconductor co.,ltd.,all rights reserved. SBR13003D SBR13003D SBR13003D SBR13003D high high high high voltage voltage voltage voltage fast-switching fast-switching fast-switching fast-switching npn npn npn npn power power power power transistor transistor transistor transistor features features features features very high switching speed high voltage capability wide reverse bias soa built-in freewheeling diode general general general general description description description description this device is designed for high voltage, high speed switching characteristics required such as lighting system, switching mode power supply. absolute absolute absolute absolute maximum maximum maximum maximum ratings ratings ratings ratings symbol symbol symbol symbol parameter parameter parameter parameter test test test test conditions conditions conditions conditions value value value value units units units units v ces collector-emitter voltage v be = 0 700 v v ceo collector-emitter voltage i b = 0 400 v v ebo emitter-base voltage i c = 0 9.0 v i c collector current 1.5 a i cp collector pulse current 3.0 a i b base current 0.75 a i bm base peak current t p = 5ms 1.5 a p c total dissipation at t c = 25 40 w total dissipation at t a = 25 1.2 t j operation junction temperature - 40 ~ 150 t stg storage temperature - 40 ~ 150 thermal characteristics symbol symbol symbol symbol parameter parameter parameter parameter value value value value units units units units r j c thermal resistance junction to case 3.12 /w r j a thermal resistance junction to ambient 89 /w
2 / 5 . SBR13003D SBR13003D SBR13003D SBR13003D electrical electrical electrical electrical characteristics characteristics characteristics characteristics (t c =25 unless otherwise noted) symbol symbol symbol symbol parameter parameter parameter parameter test test test test conditions conditions conditions conditions value value value value units units units units min min min min typ typ typ typ max max max max b v c b b b b o collector-base breakdown voltage ic=0.5ma,ie=0 700 v b v ceo collector-emitter breakdown voltage ic=10ma,ib=0 400 - - v v ce(sat) collector-emitter saturation voltage ic=200ma,ib=100ma - - 1.6 v v be(sat) base-emitter saturation voltage ic=200ma,ib=100ma - - 1.2 v i cbo collector-base cutoff current vc b = 55 0v,i e =0ma - - 10 a i ceo collector-emitter cutoff current vc e = 40 0v,i b =0ma - - 20 a i ebo emitter - base cutoff current v eb = 9 v,i c =0ma - - 20 a h fe dc current gain vce=20v,ic=20ma vce=5v, ic=1ma 10 9 - - 40 - ts t f storage time fall time v cc =250v i c =5 i b i b1 =- i b2 =0.04a - - - - 3 0.8 ? note: note: note: note: pulse test : pulse width 300, duty cycle 2%
3 / 5 SBR13003D SBR13003D SBR13003D SBR13003D fig. 1 dc current gain fig. 2 saturation voltage fig. 3 switching time fig. 4 safe operation area fig.5 power derating
4 / 5 . SBR13003D SBR13003D SBR13003D SBR13003D resistive resistive resistive resistive load load load load switching switching switching switching test test test test circuit circuit circuit circuit inductive inductive inductive inductive load load load load switching switching switching switching & & & & rbsoa rbsoa rbsoa rbsoa test test test test circuit circuit circuit circuit
5 / 5 SBR13003D SBR13003D SBR13003D SBR13003D to-126 to-126 to-126 to-126 package package package package dimension dimension dimension dimension 1 1 1 1 3
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